%PDF-1.6
%
1 0 obj
<>
endobj
2 0 obj
<>stream
2021-06-18T13:44:51+09:00
2021-06-18T13:44:51+09:00
2021-06-18T13:44:51+09:00
Adobe Acrobat 21.0
application/pdf
Ritsumeikan Univ.KO-531
uuid:f34dc7aa-5158-4a8c-9985-a5a1d0d86357
uuid:8fbea56e-9a1c-4683-8c30-cf6f979c4197
Acrobat Web Capture 15.0
endstream
endobj
5 0 obj
<>
endobj
6 0 obj
<>
endobj
3 0 obj
<>
endobj
7 0 obj
<>
endobj
10 0 obj
<>/ProcSet[/PDF/Text]>>/Type/Page>>
endobj
11 0 obj
<>stream
1 g
10 36 574.5 780 re
f
BT
0 g
/TT0 1 Tf
14.25 0 0 14.25 35.4167 788.25 Tm
(Fabrication of Chalcopyrite-type Compound Semiconductors by Electrodepos\
ition for)Tj
13.624 -1.211 Td
(Solar Cell Application)Tj
/TT1 1 Tf
12 0 0 12 502.3457 742.5 Tm
(Yusuke Oda)Tj
-38.154 -2.313 Td
(This thesis for a doctorate is to realize low-cost and high efficiency s\
olar cells using chalcopyrite-type)Tj
-1 -1.562 Td
(compound semiconductors such as CuInSe)Tj
8.25 0 0 8.25 238.4687 697.5 Tm
(2 )Tj
12 0 0 12 244.6562 696 Tm
(\(CIS\) and Cu\(In,Ga\)Se)Tj
8.25 0 0 8.25 355.6328 697.5 Tm
(2)Tj
12 0 0 12 359.7578 696 Tm
( \(CIGS\) thin films by electrodeposition)Tj
-27.271 -1.5 Td
(\(ED\). Merits of ED-technique are high material utilization and low pow\
er consumption in manufacturing. I)Tj
0 -1.5 TD
(have revealed and solved several issues of ED-chalcopyrite-type compound\
semiconductors to realize high)Tj
T*
(quality films and high efficiency solar cells. As the issue, it is so di\
fficult to deposit CIGS films consisted of)Tj
T*
(four elements by single-step ED because the deposition potential varies \
according to the element. Especially,)Tj
T*
(Ga-O compound is formed when the amount of Ga deposition is increased. T\
his is the reason why the)Tj
0 -1.562 TD
(performances of solar cells with ED-CIGS films decrease. Next, Cu)Tj
8.25 0 0 8.25 358.0703 588.75 Tm
(2-x)Tj
12 0 0 12 369.0676 587.25 Tm
(Se which decreases the cell)Tj
-28.047 -1.562 Td
(performance is formed due to excess Cu deposition in annealed ED-CIGS\( \
or CIS\) films. Therefore, Cu)Tj
8.25 0 0 8.25 530.6992 570 Tm
(2-x)Tj
12 0 0 12 541.6965 568.5 Tm
(Se)Tj
-42.433 -1.5 Td
(was removed by KCN etching. However, pits and crevasses occurred and an \
adhesion between ED-CIGS\(or)Tj
T*
(CIS\)/Mo interface was weakened due to the removal of Cu)Tj
8.25 0 0 8.25 315.4082 533.25 Tm
(2-x)Tj
12 0 0 12 326.4055 531.75 Tm
(Se formed in the grain boundary and between)Tj
-24.492 -1.5 Td
(ED-CIGS/Mo interface. I have investigated "stacked ED films" to solve th\
ese issues. Firstly, I attempted to)Tj
T*
(electrodeposit oxygen-free CuGaSe)Tj
8.25 0 0 8.25 203.7695 496.5 Tm
(2)Tj
12 0 0 12 207.8945 495 Tm
( \(CGS\) films to solve Ga-O compound in single-step ED, and fabricate)Tj
-14.616 -1.5 Td
(CIGS films using CIS/CGS stacked films. A supporting electrolyte \(pH bu\
ffer\) was added in Cu-Ga-Se)Tj
0 -1.5 TD
(solution because the formation of Ga-O compound strongly depended on pH \
of the solution. As the result,)Tj
T*
(oxygen-free CGS films were realized. In addition, smoother CGS films wer\
e improved with a smoothing)Tj
T*
(agent and a brightener. I obtained the 2.9 % efficiency CIGS solar cell \
with the CIS/CGS stacked film as)Tj
T*
(these improved results. Furthermore, high quality CIS films were realize\
d by ED-In-Se/CIS stacked technique)Tj
T*
(without KCN etching. These results indicate that CIGS films with the sta\
cked ED-technique provide the)Tj
T*
(foundation for the realization of very low-cost and higher solar cell an\
d support the encouragements of broad)Tj
T*
(use of solar cells.)Tj
ET
endstream
endobj
12 0 obj
<>
endobj
13 0 obj
(D\)nQ&9)
endobj
14 0 obj
<>
endobj
15 0 obj
<>
endobj
18 0 obj
<>
endobj
19 0 obj
<>stream
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