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清浄Si及びSiC表面の酸素、Niとの初期反応過程の原子レベルキャラクタリゼーション
https://doi.org/10.34382/00011324
https://doi.org/10.34382/0001132462838f06-2eed-45f7-bcf3-dfd754bda360
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k_277_e.pdf (127.1 kB)
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Item type | 学位論文 / Thesis or Dissertation(1) | |||||
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公開日 | 2017-11-27 | |||||
タイトル | ||||||
タイトル | 清浄Si及びSiC表面の酸素、Niとの初期反応過程の原子レベルキャラクタリゼーション | |||||
言語 | ||||||
言語 | jpn | |||||
資源タイプ | ||||||
資源タイプ識別子 | http://purl.org/coar/resource_type/c_46ec | |||||
資源タイプ | thesis | |||||
ID登録 | ||||||
ID登録 | 10.34382/00011324 | |||||
ID登録タイプ | JaLC | |||||
URI | ||||||
http://hdl.handle.net/10367/10032 | ||||||
http://hdl.handle.net/10367/10032 | ||||||
著者 |
星野, 靖
× 星野, 靖 |
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著者名(その他) | ||||||
姓名 | HOSHINO, Yasushi | |||||
学位授与番号 | ||||||
学位授与番号 | 34315甲第277号 | |||||
学位授与年月日 | ||||||
学位授与年月日 | 2003-03-31 | |||||
学位名 | ||||||
学位名 | 博士(理学) |